Samsung has initiated volume production of industry’s first 3-bit multi-level-cell ( MLC) NAND flash chips using the 30nm process. The chips using the new process and 3-bit technology allows the NAND data storage to increase its efficiency by over 50 percent as compared to a 2-bit NAND chip. This 30nm 3-bit tech will be applied to NAND-based storage products like USB flash drives, microSD cards etc.

Along with the 3-bit NAND controller, Samsung will develop an 8GB microSD card using this tech.